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  ? 1/6 table 1: main product characteristics i f(av) 2 x 30 a v rrm 150 v t j 175c v f (max) 0.76 v stps60150c power schottky rectifier rev. 1 table 3: absolute ratings (limiting values, per diode) symbol parameter value unit v rrm repetitive peak reverse voltage 150 v i f(rms) rms forward voltage 60 a i f(av) average forward current tc = 150c = 0.5 per diode per device 30 60 a i fsm surge non repetitive forward current tp = 10ms sinusoidal 270 a p arm repetitive peak avalanche power tp = 1s tj = 25c 17300 w t stg storage temperature range -65 to + 175 c t j maximum operating junction temperature * 175 c dv/dt critical rate of rise of reverse voltage 10000 v/s * : thermal runaway condition for a diode on its own heatsink dptot dtj --------------- 1 rth j a ? () ------------------------- - > k a1 a2 a1 k a2 k to-220ab STPS60150CT october 2004 features and benefits high junction temperature capabiliy low leakage current low thermal resistance high frequency operation avalanche specification description dual center tab schottky rectifier suited for high frequency server and telecom base station smps. packaged in to-220ab, this device com- bines high current rating and low volume to en- hance both reliability and power density of the application. table 2: order codes part number marking STPS60150CT STPS60150CT
stps60150c 2/6 table 4: thermal parameters table 5: static electrical characteristics (per diode) pulse test: * tp = 5 ms, < 2% ** tp = 380 s, < 2% to evaluate the conduction losses use the following equation: p = 0.6 x i f(av) + 0.0053 i f 2 (rms) symbol parameter value unit r th(j-c) junction to case per diode total 1.0 0.7 c/w r th(c) coupling 0.4 when the diodes 1 and 2 are used simultaneously: ? tj(diode 1) = p(diode 1) x r th(j-c) (per diode) + p(diode 2) x r th(c) symbol parameter tests conditions min. typ max. unit i r * reverse leakage current t j = 25c v r = v rrm 315 a t j = 125c 3 10 ma v f ** forward voltage drop t j = 25c i f = 30a 0.94 v t j = 125c i f = 30a 0.72 0.76 t j = 25c i f = 60a 0.97 1.05 t j = 125c i f = 60a 0.86 0.92
stps60150c 3/6 figure 1: average forward power dissipation versus average forward current (per diode) figure 2: average forward current versus ambient temperature ( = 0.5, per diode) figure 3: normalized avalanche power derating versus pulse duration figure 4: normalized avalanche power derating versus junction temperature figure 5: non repetitive surge peak forward current versus overload duration (maximum values, per diode) figure 6: relative variation of thermal impedance junction to case versus pulse duration (per diode) 0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 p (w) f(av) t =tp/t tp = 0.05 = 0.1 = 0.2 = 0.5 i (a) f(av) = 1 0 5 10 15 20 25 30 35 0 25 50 75 100 125 150 175 i (a) f(av) t (c) amb t =tp/t tp r=r th(j-a) th(j-c) r =15c/w th(j-a) 0.001 0.01 0.1 0.01 1 0.1 10 100 1000 1 t (s) p p(t) p (1s) arm p arm 0 0.2 0.4 0.6 0.8 1 1.2 0 25 50 75 100 125 150 t (c) j p(t) p (25c) arm p arm 0 50 100 150 200 250 300 350 1.e-03 1.e-02 1.e-01 1.e+00 t(s) i (a) m i m t =0.5 t =50c c t =75c c t =125c c 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-03 1.e-02 1.e-01 1.e+00 z/r th(j-c) th(j-c) t (s) p single pulse
stps60150c 4/6 figure 7: reverse leakage current versus reverse voltage applied (typical values, per diode) figure 8: junction capacitance versus reverse voltage applied (typical values, per diode) figure 9: forward voltage drop versus forward current (per diode) 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 1.e+04 1.e+05 0 25 50 75 100 125 150 i (a) r v (v) r t =50c j t =75c j t =150c j t =125c j t =100c j t =25c j 100 1000 10000 1 10 100 1000 c(pf) v (v) r f=1mhz v =30mv t =25c osc rms j 0.1 1.0 10.0 100.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 i (a) fm v (v) fm t =125c (typical values) j t =25c (maximum values) j t =125c (maximum values) j
stps60150c 5/6 figure 10: to-220ab package mechanical data a c d l7 dia l5 l6 l9 l4 f h2 g g1 l2 f2 f1 e m table 6: ordering information epoxy meets ul94, v0 cooling method: by conduction (c) recommended torque value: 0.8 m.n. maximum torque value: 1.0 m.n. ordering type marking package weight base qty delivery mode STPS60150CT STPS60150CT to-220ab 2.20 g 50 tube ref. dimensions millimeters inches min. max. min. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.066 f2 1.14 1.70 0.044 0.066 g 4.95 5.15 0.194 0.202 g1 2.40 2.70 0.094 0.106 h2 10 10.40 0.393 0.409 l2 16.4 typ. 0.645 typ. l4 13 14 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.20 6.60 0.244 0.259 l9 3.50 3.93 0.137 0.154 m 2.6 typ. 0.102 typ. diam. 3.75 3.85 0.147 0.151 table 7: revision history date revision description of changes 19-oct-2004 1 first issue.
stps60150c 6/6 information furnished is believed to be accurate and reliable. however, stmicroelectronics assu mes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replac es all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered tr ademark of stmicroelectronics. all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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